1N5908

Quantity	excl. VAT	VAT incl.
1 - 4	1.06$	1.15$
5 - 9	1.00$	1.08$
10 - 24	0.95$	1.03$
25 - 49	0.77$	0.83$
50 - 99	0.75$	0.81$
100 - 249	0.73$	0.79$
250 - 789	0.70$	0.76$

Quantity	U.P
1 - 4	1.06$	1.15$
5 - 9	1.00$	1.08$
10 - 24	0.95$	1.03$
25 - 49	0.77$	0.83$
50 - 99	0.75$	0.81$
100 - 249	0.73$	0.79$
250 - 789	0.70$	0.76$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 789

Set of 1

1N5908. Dielectric structure: unidirectional. Semiconductor material: silicon. Breakdown voltage: 5V. Pd (Power Dissipation, Max): 1.5 kW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 (5.5x9.5mm). Leakage current on closing Ir [A] @ Uz [V]: 300uA @ 5V. Maximum dissipation (pulse) Pp [W] @ t[msec.]: 1500W @ 1ms. Number of terminals: 2. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Function: transil diode, overvoltage protection. Quantity in stock updated on 27/04/2025, 08:25.

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Delivery in 2-3 days, with postal tracking!