Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.12$ | 1.21$ |
2 - 2 | 1.07$ | 1.16$ |
3 - 4 | 1.01$ | 1.09$ |
5 - 9 | 0.95$ | 1.03$ |
10 - 24 | 0.81$ | 0.88$ |
25 - 49 | 0.76$ | 0.82$ |
50 - 412 | 0.71$ | 0.77$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.12$ | 1.21$ |
2 - 2 | 1.07$ | 1.16$ |
3 - 4 | 1.01$ | 1.09$ |
5 - 9 | 0.95$ | 1.03$ |
10 - 24 | 0.81$ | 0.88$ |
25 - 49 | 0.76$ | 0.82$ |
50 - 412 | 0.71$ | 0.77$ |
NPN-Transistor, TO-92, 100mA, TO-92Ammo-Pack, 40V - 2N3906. NPN-Transistor, TO-92, 100mA, TO-92Ammo-Pack, 40V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92Ammo-Pack. Collector/emitter voltage Vceo: 40V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: Si-Epitaxial PlanarTransistor. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 26/04/2025, 23:25.
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