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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V - 2SA1302

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V - 2SA1302
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.98$ 4.30$
5 - 9 3.78$ 4.09$
10 - 24 3.58$ 3.87$
25 - 49 3.38$ 3.65$
50 - 99 3.30$ 3.57$
100 - 249 3.22$ 3.48$
250+ 3.06$ 3.31$
Quantity U.P
1 - 4 3.98$ 4.30$
5 - 9 3.78$ 4.09$
10 - 24 3.58$ 3.87$
25 - 49 3.38$ 3.65$
50 - 99 3.30$ 3.57$
100 - 249 3.22$ 3.48$
250+ 3.06$ 3.31$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V - 2SA1302. NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Spec info: complementary transistor (pair) 2SC3281. Quantity in stock updated on 26/04/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 83
MJL1302A

MJL1302A

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-...
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
MJL1302A
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V. Spec info: complementary transistor (pair) MJL3281A. BE diode: no. CE diode: no
Set of 1
12.81$ VAT incl.
(11.85$ excl. VAT)
12.81$
Quantity in stock : 245
2SA1943

2SA1943

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
2SA1943
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1943 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5200. BE diode: no. CE diode: no
2SA1943
NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: A1943 (O). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 230V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC5200. BE diode: no. CE diode: no
Set of 1
10.12$ VAT incl.
(9.36$ excl. VAT)
10.12$

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2SC5200

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