Quantity (Set of 5) | excl. VAT | VAT incl. |
---|---|---|
1 - 2 | 1.12$ | 1.21$ |
3 - 4 | 1.06$ | 1.15$ |
5 - 9 | 1.01$ | 1.09$ |
10 - 19 | 0.98$ | 1.06$ |
20 - 49 | 0.95$ | 1.03$ |
50 - 99 | 0.92$ | 0.99$ |
100 - 2000000 | 0.87$ | 0.94$ |
Quantity (Set of 5) | U.P | |
---|---|---|
1 - 2 | 1.12$ | 1.21$ |
3 - 4 | 1.06$ | 1.15$ |
5 - 9 | 1.01$ | 1.09$ |
10 - 19 | 0.98$ | 1.06$ |
20 - 49 | 0.95$ | 1.03$ |
50 - 99 | 0.92$ | 0.99$ |
100 - 2000000 | 0.87$ | 0.94$ |
NPN-Transistor, 0.5A, TO-92, TO-92, 50V - 2SA673A. NPN-Transistor, 0.5A, TO-92, TO-92, 50V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: Low frequency amplifier. Max hFE gain: 200. Minimum hFE gain: 100. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.4W. Assembly/installation: PCB through-hole mounting. Technology: Silicon PNP Epitaxial. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Vebo: 4 v. Original product from manufacturer Hitachi. Quantity in stock updated on 15/06/2025, 19:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.