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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V - 2SB562C

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V - 2SB562C
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 9 0.50$ 0.54$
10 - 24 0.47$ 0.51$
25 - 49 0.45$ 0.49$
50 - 99 0.42$ 0.45$
100 - 249 0.41$ 0.44$
250 - 499 0.40$ 0.43$
500 - 616 0.38$ 0.41$
Quantity U.P
1 - 9 0.50$ 0.54$
10 - 24 0.47$ 0.51$
25 - 49 0.45$ 0.49$
50 - 99 0.42$ 0.45$
100 - 249 0.41$ 0.44$
250 - 499 0.40$ 0.43$
500 - 616 0.38$ 0.41$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 616
Set of 1

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V - 2SB562C. NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 20V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: hFE 120...240. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 25V. Spec info: complementary transistor (pair) 2SD468. Quantity in stock updated on 28/04/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 2643
BC640

BC640

NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to ...
BC640
NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
BC640
NPN-Transistor, 1A, TO-92, TO-92, 80V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
Set of 1
0.27$ VAT incl.
(0.25$ excl. VAT)
0.27$

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2SC536

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