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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 0.1A, TO-126F, TO-126F, 180V - 2SC2682

NPN transistor, 0.1A, TO-126F, TO-126F, 180V - 2SC2682
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.95$ 1.03$
10 - 24 0.90$ 0.97$
25 - 49 0.85$ 0.92$
50 - 99 0.80$ 0.86$
100 - 249 0.79$ 0.85$
250 - 391 0.77$ 0.83$
Quantity U.P
1 - 9 0.95$ 1.03$
10 - 24 0.90$ 0.97$
25 - 49 0.85$ 0.92$
50 - 99 0.80$ 0.86$
100 - 249 0.79$ 0.85$
250 - 391 0.77$ 0.83$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 391
Set of 1

NPN transistor, 0.1A, TO-126F, TO-126F, 180V - 2SC2682. NPN transistor, 0.1A, TO-126F, TO-126F, 180V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 180V. Semiconductor material: silicon. FT: 200 MHz. Pd (Power Dissipation, Max): 8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Function: hFE 100...200. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 29/04/2025, 17:25.

Technical documentation

Equivalent products :

Quantity in stock : 57
BF459

BF459

NPN transistor, 100mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 100mA. Housing (acc...
BF459
NPN transistor, 100mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 100mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
BF459
NPN transistor, 100mA, TO-126, 300V, TO-126 (TO-225, SOT-32). Collector current: 100mA. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Housing: TO-126 (TO-225, SOT-32). Cost): 5.5pF. Semiconductor material: silicon. FT: 90 MHz. Function: VID-L. Minimum hFE gain: 25. Ic(pulse): 300mA. Temperature: +150°C. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
1.82$ VAT incl.
(1.68$ excl. VAT)
1.82$
Quantity in stock : 12
2SC3117

2SC3117

NPN transistor, 1.5A, 180V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Collector/emitter volt...
2SC3117
NPN transistor, 1.5A, 180V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Collector/emitter voltage Vceo: 180V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 120 MHz. Function: TV-NF/E. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1249
2SC3117
NPN transistor, 1.5A, 180V, TO-126 (TO-225, SOT-32). Collector current: 1.5A. Collector/emitter voltage Vceo: 180V. Housing: TO-126 (TO-225, SOT-32). Semiconductor material: silicon. FT: 120 MHz. Function: TV-NF/E. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1249
Set of 1
3.37$ VAT incl.
(3.12$ excl. VAT)
3.37$

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