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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5359

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5359
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Quantity excl. VAT VAT incl.
1 - 1 13.32$ 14.40$
2 - 2 12.65$ 13.67$
3 - 4 12.38$ 13.38$
5 - 9 11.98$ 12.95$
10 - 19 11.72$ 12.67$
20 - 24 11.32$ 12.24$
Quantity U.P
1 - 1 13.32$ 14.40$
2 - 2 12.65$ 13.67$
3 - 4 12.38$ 13.38$
5 - 9 11.98$ 12.95$
10 - 19 11.72$ 12.67$
20 - 24 11.32$ 12.24$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 24
Set of 1

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V - 2SC5359. NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 180W. Spec info: complementary transistor (pair) 2SA1987. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Original product from manufacturer Toshiba. Quantity in stock updated on 16/06/2025, 12:25.

Technical documentation

Equivalent products :

Quantity in stock : 196
2SC5200

2SC5200

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
2SC5200
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1943. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
2SC5200
NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 200pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1943. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 1
11.57$ VAT incl.
(10.70$ excl. VAT)
11.57$
Quantity in stock : 48
MJW3281AG

MJW3281AG

NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (accordi...
MJW3281AG
NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 2.8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW1302A. Assembly/installation: PCB through-hole mounting. Technology: Power Bipolar Transistor. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
MJW3281AG
NPN transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. BE diode: no. Cost): 2.8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201444 201513. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW1302A. Assembly/installation: PCB through-hole mounting. Technology: Power Bipolar Transistor. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V
Set of 1
7.79$ VAT incl.
(7.21$ excl. VAT)
7.79$

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2SA1943

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NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264 ( 2-21F1A ), 230V. Collector current: 15A. Housing: T...
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