Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.61$ | 2.82$ |
5 - 9 | 2.48$ | 2.68$ |
10 - 24 | 2.35$ | 2.54$ |
25 - 49 | 2.22$ | 2.40$ |
50 - 99 | 2.17$ | 2.35$ |
100 - 249 | 2.12$ | 2.29$ |
250+ | 2.01$ | 2.17$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.61$ | 2.82$ |
5 - 9 | 2.48$ | 2.68$ |
10 - 24 | 2.35$ | 2.54$ |
25 - 49 | 2.22$ | 2.40$ |
50 - 99 | 2.17$ | 2.35$ |
100 - 249 | 2.12$ | 2.29$ |
250+ | 2.01$ | 2.17$ |
NPN transistor, 3A, TO-220FP, 2-10R1A, 60V - 2SD2012. NPN transistor, 3A, TO-220FP, 2-10R1A, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 300. Minimum hFE gain: 100. Marking on the case: D2012. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) 2SB1366. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 22:25.
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