N-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SK1530

N-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SK1530. N-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V. ID (T=25°C): 12A. Idss (max): 1mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F1B. Voltage Vds(max): 200V. C(in): 900pF. Cost): 180pF. Channel type: N. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: K1530. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Original product from manufacturer Toshiba. Quantity in stock updated on 15/06/2025, 17:25.