Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.54$ | 1.66$ |
5 - 9 | 1.46$ | 1.58$ |
10 - 24 | 1.42$ | 1.54$ |
25 - 49 | 1.39$ | 1.50$ |
50 - 99 | 1.36$ | 1.47$ |
100 - 249 | 1.31$ | 1.42$ |
250+ | 1.26$ | 1.36$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.54$ | 1.66$ |
5 - 9 | 1.46$ | 1.58$ |
10 - 24 | 1.42$ | 1.54$ |
25 - 49 | 1.39$ | 1.50$ |
50 - 99 | 1.36$ | 1.47$ |
100 - 249 | 1.31$ | 1.42$ |
250+ | 1.26$ | 1.36$ |
80SQ045N. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Axial Leads. Forward current (AV): 8A. IFSM: 140A. MRI (max): 50mA. MRI (min): 1mA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201AD (5.0x8.0mm). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.55V. VRRM: 45V. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 16/06/2025, 10:25.
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