Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.85$ | 0.92$ |
10 - 24 | 0.81$ | 0.88$ |
25 - 49 | 0.76$ | 0.82$ |
50 - 99 | 0.72$ | 0.78$ |
100 - 134 | 0.65$ | 0.70$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.85$ | 0.92$ |
10 - 24 | 0.81$ | 0.88$ |
25 - 49 | 0.76$ | 0.82$ |
50 - 99 | 0.72$ | 0.78$ |
100 - 134 | 0.65$ | 0.70$ |
B1000C6000A. VRRM: 1000V. Forward current (AV): 6A. Cj: 50pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 158A. MRI (min): 5uA. Equivalents: KBU607G, KBU610, GBU6M-E3/45, GBU607C2. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 21.5x18.3x3.4mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: Ifsm 158A (50Hz 10ms), 175A (60Hz 8.3ms). Quantity in stock updated on 26/04/2025, 23:25.
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