Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.37$ | 1.48$ |
2 - 2 | 1.30$ | 1.41$ |
3 - 4 | 1.23$ | 1.33$ |
5 - 9 | 1.20$ | 1.30$ |
10 - 24 | 1.16$ | 1.25$ |
25 - 49 | 1.01$ | 1.09$ |
50 - 787 | 0.96$ | 1.04$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.37$ | 1.48$ |
2 - 2 | 1.30$ | 1.41$ |
3 - 4 | 1.23$ | 1.33$ |
5 - 9 | 1.20$ | 1.30$ |
10 - 24 | 1.16$ | 1.25$ |
25 - 49 | 1.01$ | 1.09$ |
50 - 787 | 0.96$ | 1.04$ |
BAV199. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 85V. Forward current (AV): 200mA. IFSM: 500mA. RoHS: yes. Spec info: IFSM--4.5A (tp=1us), 0.5A (tp=1s). Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.9V. Cj: 2pF. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 0.6us. Semiconductor material: silicon. Function: dual low-leakage diode. Production date: 2014/49. MRI (max): 80nA. MRI (min): 5nA. Marking on the case: JYs. Number of terminals: 3. Temperature: +150°C. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 26/07/2025, 13:25.
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