Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.82$ | 0.89$ |
5 - 9 | 0.78$ | 0.84$ |
10 - 24 | 0.74$ | 0.80$ |
25 - 49 | 0.70$ | 0.76$ |
50 - 99 | 0.66$ | 0.71$ |
100 - 149 | 0.62$ | 0.67$ |
150 - 1288 | 0.57$ | 0.62$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.82$ | 0.89$ |
5 - 9 | 0.78$ | 0.84$ |
10 - 24 | 0.74$ | 0.80$ |
25 - 49 | 0.70$ | 0.76$ |
50 - 99 | 0.66$ | 0.71$ |
100 - 149 | 0.62$ | 0.67$ |
150 - 1288 | 0.57$ | 0.62$ |
NPN transistor, 0.1A, TO-92, TO-92, 65V - BC546A. NPN transistor, 0.1A, TO-92, TO-92, 65V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V. Spec info: complementary transistor (pair) BC556A. BE diode: no. CE diode: no. Quantity in stock updated on 27/04/2025, 17:25.
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