Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.47$ | 0.51$ |
5 - 9 | 0.45$ | 0.49$ |
10 - 24 | 0.43$ | 0.46$ |
25 - 49 | 0.40$ | 0.43$ |
50 - 99 | 0.38$ | 0.41$ |
100 - 149 | 0.36$ | 0.39$ |
150 - 30555 | 0.33$ | 0.36$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.47$ | 0.51$ |
5 - 9 | 0.45$ | 0.49$ |
10 - 24 | 0.43$ | 0.46$ |
25 - 49 | 0.40$ | 0.43$ |
50 - 99 | 0.38$ | 0.41$ |
100 - 149 | 0.36$ | 0.39$ |
150 - 30555 | 0.33$ | 0.36$ |
NPN transistor, 0.1A, SOT-23 ( TO-236 ), TO-236AB, 65V - BC846B. NPN transistor, 0.1A, SOT-23 ( TO-236 ), TO-236AB, 65V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): TO-236AB. Collector/emitter voltage Vceo: 65V. C(in): 11pF. Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Marking on the case: 1B. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 80V. Vebo: 6V. Spec info: SMD 1B. BE diode: no. CE diode: no. Quantity in stock updated on 27/04/2025, 15:25.
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