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NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V - BD249C-PMC

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V - BD249C-PMC
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.17$ 4.51$
5 - 9 3.96$ 4.28$
10 - 24 3.84$ 4.15$
25 - 49 3.76$ 4.06$
50 - 73 3.67$ 3.97$
Quantity U.P
1 - 4 4.17$ 4.51$
5 - 9 3.96$ 4.28$
10 - 24 3.84$ 4.15$
25 - 49 3.76$ 4.06$
50 - 73 3.67$ 3.97$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 73
Set of 1

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V - BD249C-PMC. NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD250C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Original product from manufacturer Pmc. Quantity in stock updated on 15/06/2025, 16:25.

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NPN transistor, 25A, TO-247, TO-247, 100V, 100V. Collector current: 25A. Housing: TO-247. Housing (a...
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NPN transistor, 25A, TO-247, TO-247, 100V, 100V. Collector current: 25A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1450. Max hFE gain: 50. Minimum hFE gain: 25. Ic(pulse): 50A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) TIP36C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 125W. Max frequency: 3MHz
TIP35C
NPN transistor, 25A, TO-247, TO-247, 100V, 100V. Collector current: 25A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Production date: 1450. Max hFE gain: 50. Minimum hFE gain: 25. Ic(pulse): 50A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) TIP36C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 125W. Max frequency: 3MHz
Set of 1
3.36$ VAT incl.
(3.11$ excl. VAT)
3.36$

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