Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.76$ | 0.82$ |
5 - 9 | 0.72$ | 0.78$ |
10 - 24 | 0.69$ | 0.75$ |
25 - 49 | 0.65$ | 0.70$ |
50 - 99 | 0.63$ | 0.68$ |
100 - 249 | 0.57$ | 0.62$ |
250 - 3069 | 0.54$ | 0.58$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.76$ | 0.82$ |
5 - 9 | 0.72$ | 0.78$ |
10 - 24 | 0.69$ | 0.75$ |
25 - 49 | 0.65$ | 0.70$ |
50 - 99 | 0.63$ | 0.68$ |
100 - 249 | 0.57$ | 0.62$ |
250 - 3069 | 0.54$ | 0.58$ |
NPN transistor, 4A, 100V, TO-126, TO-126, 100V, TO-126 (TO-225, SOT-32) - BD681. NPN transistor, 4A, 100V, TO-126, TO-126, 100V, TO-126 (TO-225, SOT-32). Collector current: 4A. Collector-Emitter Voltage VCEO: 100V. Housing: TO-126. Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Housing: TO-126 (TO-225, SOT-32). Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Power: 40W. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V. Spec info: complementary transistor (pair) BD682. Quantity in stock updated on 28/04/2025, 03:25.
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