Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.79$ | 0.85$ |
10 - 24 | 0.75$ | 0.81$ |
25 - 49 | 0.73$ | 0.79$ |
50 - 99 | 0.71$ | 0.77$ |
100 - 249 | 0.65$ | 0.70$ |
250 - 499 | 0.62$ | 0.67$ |
500 - 2183 | 0.62$ | 0.67$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.79$ | 0.85$ |
10 - 24 | 0.75$ | 0.81$ |
25 - 49 | 0.73$ | 0.79$ |
50 - 99 | 0.71$ | 0.77$ |
100 - 249 | 0.65$ | 0.70$ |
250 - 499 | 0.62$ | 0.67$ |
500 - 2183 | 0.62$ | 0.67$ |
NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 100V, 100V, TO-126 - BD681. NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 100V, 100V, TO-126. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Collector-Emitter Voltage VCEO: 100V. Housing: TO-126. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD682. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V. Type of transistor: Darlington Power Transistor. Polarity: NPN. Type: Darlington transistor. Built-in diode: yes. Power: 40W. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 16/06/2025, 11:25.
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