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BZG03C200

BZG03C200
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Quantity excl. VAT VAT incl.
1 - 9 0.60$ 0.65$
10 - 24 0.57$ 0.62$
25 - 49 0.54$ 0.58$
50 - 99 0.51$ 0.55$
100 - 249 0.50$ 0.54$
250 - 499 0.43$ 0.46$
500 - 1190 0.40$ 0.43$
Quantity U.P
1 - 9 0.60$ 0.65$
10 - 24 0.57$ 0.62$
25 - 49 0.54$ 0.58$
50 - 99 0.51$ 0.55$
100 - 249 0.50$ 0.54$
250 - 499 0.43$ 0.46$
500 - 1190 0.40$ 0.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1190
Set of 1

BZG03C200. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. Equivalents: BZG03C200G, BZG03C200TR. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMA DO214AC 5.5x2.8mm. Tolerance: 5%. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.2V. Zener voltage: 200V. Spec info: PZSM 600W (Tp=100us, 25°C). Quantity in stock updated on 27/04/2025, 20:25.

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