Diode rectifier bridges

VRRM: 1200V. Forward current (AV): 86A. Dielectric structure: Diode bridge. Function: three-phase rectifier bridge. IFSM: 530A. MRI (max): 3mA. MRI (min): 0.5mA. Dimensions of connections: 0.75x12.3mm. Dimensions: 47x30x8mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): ECO-PAC 1. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. Number of terminals: 5. Spec info: IFSM--45° t=10ms (50Hz) 530A, t=8.3ms (60Hz) 570A

Pitch: 7.5 mm. Dimensions: 25x15x4.5mm

VRRM: 250V. Forward current (AV): 5A. Cj: 15pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: single phase rectifier bridge. IFSM: 30A. MRI (max): 500uA. MRI (min): 5uA. Marking on the case: B250C5000A. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 40x21x6.5mm. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

VRRM: 100V. Forward current (AV): 6A. Cj: 186pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 250A. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 23x17x6.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: IFSM--200Ap (t=8.3ms)

Rated current [A]: 0.8A. Peak voltage Urrm [V]: 250V. Peak current Ifsm [A]: 40A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Quantity per case: 4. Number of terminals: 4

VRRM: 800V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Pitch: 7.62mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SMD. Housing (according to data sheet): SMD-4. Quantity per case: 4. Number of terminals: 4

VRRM: 600V. Forward current (AV): 1A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Pitch: 7.62mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DIP. Housing (according to data sheet): DIP-4. Quantity per case: 4. Number of terminals: 4

Rated current [A]: 0.8A. Peak voltage Urrm [V]: 600V. Peak current Ifsm [A]: 40A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

VRRM: 800V. Forward current (AV): 0.8A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 40A. MRI (max): 1mA. MRI (min): 10uA. Pitch: 2.54mm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: TO-269AA (MBS). Housing (according to data sheet): MiniDIL / SLIM. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.95V. Forward voltage Vf (min): 1.2V. Number of terminals: 4

Rated current [A]: 0.8A. Peak voltage Urrm [V]: 160V. Peak current Ifsm [A]: 40A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering (SMD). Housing: TO-269AA. Housing (JEDEC standard): TO-269AA. Configuration: surface-mounted component (SMD). Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +150°C

Rated current [A]: 17A. Peak voltage Urrm [V]: 1.6 kV. Peak current Ifsm [A]: 320A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: 28.8x28.8x10mm. Number of terminals: 4. Threshold voltage Uf [V]: 2.2V. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

Rated current [A]: 28A. Peak voltage Urrm [V]: 1.2 kV. Peak current Ifsm [A]: 280A. RoHS: yes. Component family: Controlled Diode Bridge (Graetz). Housing: 63x32x22mm. Number of terminals: 4. Threshold voltage Uf [V]: 2.25V. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +125°C. Configuration: connection by faston terminals

Rated current [A]: 20A. Peak voltage Urrm [V]: 1.6 kV. Peak current Ifsm [A]: 320A. RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.8x28.8x10mm. Number of terminals: 5. Threshold voltage Uf [V]: 2.2V. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Configuration: connection by faston terminals

VRRM: 800V. Forward current (AV): 25A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. Three-phase: 0. IFSM: 300A. Equivalents: D25XB60, D25SB80, TS25P06G, GBJ2508, GBK25K. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 30x20x4.6mm ( SIL Bridge ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Number of terminals: 4. Spec info: 300Ap Peak Forward Surge Current, 8.3ms Single

Rated current [A]: 35A. Peak voltage Urrm [V]: 1700V. Peak current Ifsm [A]: 475A. RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: 28.5x28.5x10mm. Configuration: Screwed. Number of terminals: 5. Threshold voltage Uf [V]: 1.19V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Rated current [A]: 35A. Peak voltage Urrm [V]: 1 kV. Peak current Ifsm [A]: 475A. RoHS: yes. Component family: Diode bridge (Graetz). Housing: PCB soldering. Housing: 28.6x28.6x7.7mm. Configuration: PCB through-hole mounting. Number of terminals: 4. Threshold voltage Uf [V]: 1.1V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Rated current [A]: 86A. Peak voltage Urrm [V]: 1.6 kV. Peak current Ifsm [A]: 530A. RoHS: yes. Component family: Three-phase diode rectifier bridge. Housing: ECO-PAC1. Configuration: solder tabs. Number of terminals: 5. Threshold voltage Uf [V]: 1.5V. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

VRRM: 600V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS)

VRRM: 1000V. Forward current (AV): 1.5A. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS)