Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 66.45$ | 71.83$ |
2 - 2 | 63.13$ | 68.24$ |
3 - 4 | 58.86$ | 63.63$ |
5 - 8 | 57.60$ | 62.27$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 66.45$ | 71.83$ |
2 - 2 | 63.13$ | 68.24$ |
3 - 4 | 58.86$ | 63.63$ |
5 - 8 | 57.60$ | 62.27$ |
DSEI2X121-02A. Forward current (AV): 2x123A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Conditioning: plastic tube. Conditioning unit: 10. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: dual fast recovery diode. MRI (max): 20mA. MRI (min): 1mA. Number of terminals: 4. Pd (Power Dissipation, Max): 357W. RoHS: yes. Spec info: 1080Ap t=10ms, TVJ=150°C. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. Original product from manufacturer IXYS. Quantity in stock updated on 16/06/2025, 15:25.
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