Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 66.45$ | 71.83$ |
2 - 2 | 63.13$ | 68.24$ |
3 - 4 | 56.97$ | 61.58$ |
5 - 8 | 53.80$ | 58.16$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 66.45$ | 71.83$ |
2 - 2 | 63.13$ | 68.24$ |
3 - 4 | 56.97$ | 61.58$ |
5 - 8 | 53.80$ | 58.16$ |
DSEI2X121-02A. Forward current (AV): 2x123A. IFSM: 1200A. Housing: ISOTOP ( SOT227B ). Housing (according to data sheet): ISOTOP ( SOT227B ). VRRM: 200V. Conditioning: plastic tube. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. MRI (max): 20mA. MRI (min): 1mA. Pd (Power Dissipation, Max): 357W. RoHS: yes. Assembly/installation: screw. Technology: 'Epitaxial Diode'. Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. Conditioning unit: 10. Quantity per case: 2. Number of terminals: 4. Function: dual fast recovery diode. Spec info: 1080Ap t=10ms, TVJ=150°C. Quantity in stock updated on 28/04/2025, 09:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.