Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.33$ | 4.68$ |
5 - 9 | 4.12$ | 4.45$ |
10 - 24 | 3.90$ | 4.22$ |
25 - 49 | 3.68$ | 3.98$ |
50 - 85 | 3.60$ | 3.89$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.33$ | 4.68$ |
5 - 9 | 4.12$ | 4.45$ |
10 - 24 | 3.90$ | 4.22$ |
25 - 49 | 3.68$ | 3.98$ |
50 - 85 | 3.60$ | 3.89$ |
N-channel transistor, 0.32 Ohms, TO-220F, 7A, 11A, 10uA, 0.33 Ohms, TO-220FP, TO-220F, 600V, 650V - FCPF11N60. N-channel transistor, 0.32 Ohms, TO-220F, 7A, 11A, 10uA, 0.33 Ohms, TO-220FP, TO-220F, 600V, 650V. On-resistance Rds On: 0.32 Ohms. Housing: TO-220F. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 10uA. On-resistance Rds On: 0.33 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 600V. Drain-source voltage (Vds): 650V. Channel type: N. Type of transistor: MOSFET power transistor. Max drain current: 11A. Power: 36W. IDss (min): 1uA. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Technology: SuperFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Quantity in stock updated on 27/04/2025, 08:25.
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