Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.32$ | 2.51$ |
5 - 9 | 2.20$ | 2.38$ |
10 - 24 | 2.09$ | 2.26$ |
25 - 49 | 1.97$ | 2.13$ |
50 - 99 | 1.54$ | 1.66$ |
100 - 249 | 1.50$ | 1.62$ |
250 - 6325 | 1.43$ | 1.55$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.32$ | 2.51$ |
5 - 9 | 2.20$ | 2.38$ |
10 - 24 | 2.09$ | 2.26$ |
25 - 49 | 1.97$ | 2.13$ |
50 - 99 | 1.54$ | 1.66$ |
100 - 249 | 1.50$ | 1.62$ |
250 - 6325 | 1.43$ | 1.55$ |
N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 30A, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V - FDD5690. N-channel transistor, PCB soldering (SMD), D-PAK, TO-252, 60V, 30A, 0.023 Ohms, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. Housing: PCB soldering (SMD). Housing: D-PAK. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 30A. On-resistance Rds On: 0.023 Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FDD5690. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.023 Ohms @ 9A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 24 ns. Ciss Gate Capacitance [pF]: 1110pF. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 10 ns. Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 27/04/2025, 16:25.
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