Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.45$ | 3.73$ |
5 - 9 | 3.27$ | 3.53$ |
10 - 24 | 3.10$ | 3.35$ |
25 - 49 | 2.93$ | 3.17$ |
50 - 99 | 2.86$ | 3.09$ |
100 - 169 | 2.79$ | 3.02$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.45$ | 3.73$ |
5 - 9 | 3.27$ | 3.53$ |
10 - 24 | 3.10$ | 3.35$ |
25 - 49 | 2.93$ | 3.17$ |
50 - 99 | 2.86$ | 3.09$ |
100 - 169 | 2.79$ | 3.02$ |
N-channel transistor, 3A, 5A, 10uA, 1.15 Ohms, TO-220FP, TO-220F, 500V - FDPF5N50T. N-channel transistor, 3A, 5A, 10uA, 1.15 Ohms, TO-220FP, TO-220F, 500V. ID (T=100°C): 3A. ID (T=25°C): 5A. Idss (max): 10uA. On-resistance Rds On: 1.15 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 500V. C(in): 480pF. Cost): 66pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 20A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 28W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 13 ns. Technology: UniFET MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Spec info: Low gate charge (typical 11nC), Low Crss 5pF. G-S Protection: no. Quantity in stock updated on 28/04/2025, 17:25.
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