Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.56$ | 2.77$ |
5 - 9 | 2.43$ | 2.63$ |
10 - 24 | 2.31$ | 2.50$ |
25 - 49 | 2.18$ | 2.36$ |
50 - 99 | 2.13$ | 2.30$ |
100 - 225 | 1.92$ | 2.08$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.56$ | 2.77$ |
5 - 9 | 2.43$ | 2.63$ |
10 - 24 | 2.31$ | 2.50$ |
25 - 49 | 2.18$ | 2.36$ |
50 - 99 | 2.13$ | 2.30$ |
100 - 225 | 1.92$ | 2.08$ |
MOSFET transistor FDS8962C. MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: dual MOSFET transistor. N and P channels. 'PowerTrench'. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Quantity per case: 2. Function: Q1 N-Ch 7A, 30V RDS(on)=0.030 Ohms, Vgs=10V. Spec info: Q2 P-Ch, 5A, 30V RDS(on)=0.052 Ohms, Vgs=10V. Quantity in stock updated on 28/04/2025, 14:25.
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