Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.03$ | 14.09$ |
2 - 2 | 12.38$ | 13.38$ |
3 - 4 | 11.73$ | 12.68$ |
5 - 9 | 11.08$ | 11.98$ |
10 - 19 | 10.82$ | 11.70$ |
20 - 29 | 10.56$ | 11.42$ |
30 - 71 | 10.17$ | 10.99$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.03$ | 14.09$ |
2 - 2 | 12.38$ | 13.38$ |
3 - 4 | 11.73$ | 12.68$ |
5 - 9 | 11.08$ | 11.98$ |
10 - 19 | 10.82$ | 11.70$ |
20 - 29 | 10.56$ | 11.42$ |
30 - 71 | 10.17$ | 10.99$ |
N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, TO-3PN ( 2-16C1B ), TO-3PN, 800V, 1 - FQA13N80-F109. N-channel transistor, PCB soldering, TO-3PN, 800V, 12.6A, TO-3PN ( 2-16C1B ), TO-3PN, 800V, 1. Housing: PCB soldering. Housing: TO-3PN. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. Housing (JEDEC standard): 1. RoHS: yes. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 27/04/2025, 08:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.