Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.03$ | 14.09$ |
2 - 2 | 12.38$ | 13.38$ |
3 - 4 | 12.12$ | 13.10$ |
5 - 9 | 11.73$ | 12.68$ |
10 - 19 | 11.47$ | 12.40$ |
20 - 29 | 11.08$ | 11.98$ |
30 - 32 | 10.69$ | 11.56$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.03$ | 14.09$ |
2 - 2 | 12.38$ | 13.38$ |
3 - 4 | 12.12$ | 13.10$ |
5 - 9 | 11.73$ | 12.68$ |
10 - 19 | 11.47$ | 12.40$ |
20 - 29 | 11.08$ | 11.98$ |
30 - 32 | 10.69$ | 11.56$ |
N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V - FQA13N80-F109. N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 8A. ID (T=25°C): 12.6A. Idss (max): 100uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2700pF. Cost): 275pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 50.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer Fairchild. Quantity in stock updated on 01/08/2025, 10:25.
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