N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V - FQPF8N80C

Quantity	excl. VAT	VAT incl.
1 - 4	3.25$	3.51$
5 - 9	3.09$	3.34$
10 - 24	2.92$	3.16$
25 - 49	2.76$	2.98$
50 - 99	2.70$	2.92$
100 - 249	1.50$	1.62$
250 - 704	0.57$	0.62$

Quantity	U.P
1 - 4	3.25$	3.51$
5 - 9	3.09$	3.34$
10 - 24	2.92$	3.16$
25 - 49	2.76$	2.98$
50 - 99	2.70$	2.92$
100 - 249	1.50$	1.62$
250 - 704	0.57$	0.62$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 704

Set of 1

N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V - FQPF8N80C. N-channel transistor, 5.1A, 8A, 100uA, 1.29 Ohms, TO-220FP, TO-220F, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 1.29 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. C(in): 1580pF. Cost): 135pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 690 ns. Type of transistor: MOSFET. Function: Fast switch, Low gate charge 35nC, Low Crss 13pF. Production date: 201432. Id(imp): 32A. IDss (min): 10uA. Pd (Power Dissipation, Max): 59W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 65 ns. Td(on): 40 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. G-S Protection: no. Quantity in stock updated on 27/04/2025, 08:25.

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