Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.12$ | 2.29$ |
5 - 9 | 2.01$ | 2.17$ |
10 - 24 | 1.91$ | 2.06$ |
25 - 49 | 1.80$ | 1.95$ |
50 - 78 | 1.76$ | 1.90$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.12$ | 2.29$ |
5 - 9 | 2.01$ | 2.17$ |
10 - 24 | 1.91$ | 2.06$ |
25 - 49 | 1.80$ | 1.95$ |
50 - 78 | 1.76$ | 1.90$ |
GBI10J. VRRM: 600V. Forward current (AV): 10A. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 160A. MRI (max): 5uA. Marking on the case: +~~-. Equivalents: KBJ10J. Number of terminals: 4. Pitch: 10x7.5x7.5mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Housing (according to data sheet): 30x20x3.6mm. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Quantity in stock updated on 27/04/2025, 14:25.
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