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Semiconductors Diodes Diode rectifier bridges

GBU4J

GBU4J
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.28$ 1.38$
5 - 9 1.22$ 1.32$
10 - 24 1.16$ 1.25$
25 - 49 1.09$ 1.18$
50 - 99 1.07$ 1.16$
100 - 249 0.94$ 1.02$
250 - 250 1.03$ 1.11$
Quantity U.P
1 - 4 1.28$ 1.38$
5 - 9 1.22$ 1.32$
10 - 24 1.16$ 1.25$
25 - 49 1.09$ 1.18$
50 - 99 1.07$ 1.16$
100 - 249 0.94$ 1.02$
250 - 250 1.03$ 1.11$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 250
Set of 1

GBU4J. VRRM: 600V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Three-phase: no. IFSM: 150A. Equivalents: KBL406, RS406, RS406G. Pitch: 5.08mm. Dimensions: 22x19x3.3mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Quantity per case: 4. Number of terminals: 4. Spec info: Ifsm 150Ap (t=8.3ms). Quantity in stock updated on 27/04/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 359
KBL08

KBL08

VRRM: 800V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: si...
KBL08
VRRM: 800V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. Equivalents: KBL408, RS408, RS408G, GBU406. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
KBL08
VRRM: 800V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Rectifier bridge. IFSM: 200A. Equivalents: KBL408, RS408, RS408G, GBU406. Pitch: 5.08mm. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Number of terminals: 4. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
1.02$ VAT incl.
(0.94$ excl. VAT)
1.02$
Quantity in stock : 130
KBL10

KBL10

VRRM: 1000V. Forward current (AV): 4A. Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode b...
KBL10
VRRM: 1000V. Forward current (AV): 4A. Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: RS407. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: IFSM--200Ap (t=8.3ms)
KBL10
VRRM: 1000V. Forward current (AV): 4A. Cj: 40pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. IFSM: 200A. MRI (max): 500uA. MRI (min): 10uA. Marking on the case: RS407. Dimensions of connections: 5.08x5.08mm. Number of terminals: 4. Dimensions: 19x16x6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SIP / SIL. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Spec info: IFSM--200Ap (t=8.3ms)
Set of 1
1.18$ VAT incl.
(1.09$ excl. VAT)
1.18$

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FUSE-3-150A20F

FUSE-3-150A20F

Max Continuous current: 3.15A. Fuse type: Glass (Cylindrical). Fuse properties: fast blow fuse (F)...
FUSE-3-150A20F
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FUSE-6-300A20F

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KBL06

KBL06

VRRM: 600V. Forward current (AV): 4A. Dielectric structure: Diode bridge. Semiconductor material: si...
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Quantity in stock : 287
KBP06

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VRRM: 600V. Forward current (AV): 2A. Quantity per case: 4. Dielectric structure: Diode bridge. Semi...
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Quantity in stock : 93
KBPC3510

KBPC3510

VRRM: 1000V. Forward current (AV): 35A. IFSM: 400A. MRI (max): 1mA. MRI (min): 10uA. Dimensions of c...
KBPC3510
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GBJ2510

GBJ2510

VRRM: 1000V. Forward current (AV): 25A. Conditioning: plastic tube. Conditioning unit: 15. Quantity ...
GBJ2510
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Quantity in stock : 156
BR310

BR310

VRRM: 1000V. Forward current (AV): 3A. Quantity per case: 4. Dielectric structure: Diode bridge. Sem...
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V23072C1062A303

V23072C1062A303

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