Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 12.00$ | 12.97$ |
2 - 2 | 11.40$ | 12.32$ |
3 - 4 | 10.80$ | 11.67$ |
5 - 9 | 10.20$ | 11.03$ |
10 - 19 | 9.96$ | 10.77$ |
20 - 29 | 9.72$ | 10.51$ |
30 - 39 | 9.36$ | 10.12$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 12.00$ | 12.97$ |
2 - 2 | 11.40$ | 12.32$ |
3 - 4 | 10.80$ | 11.67$ |
5 - 9 | 10.20$ | 11.03$ |
10 - 19 | 9.96$ | 10.77$ |
20 - 29 | 9.72$ | 10.51$ |
30 - 39 | 9.36$ | 10.12$ |
N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V - GT30J322. N-channel transistor, TO-3P ( TO-218 SOT-93 ), TO-3P( GCE ), 600V. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P( GCE ). Collector/emitter voltage Vceo: 600V. Channel type: N. Function: 'Current Resonance Inverter Switching'. Collector current: 30A. Ic(pulse): 100A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 400 ns. Td(on): 30 ns. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 2.1V. Maximum saturation voltage VCE(sat): 2.1V. Number of terminals: 3. Spec info: insulated gate bipolar transistor (IGBT). CE diode: yes. Germanium diode: no. Quantity in stock updated on 29/04/2025, 03:25.
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