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N-channel transistor, 17A, TO-247, TO-247, 1200V - HGTG10N120BND

N-channel transistor, 17A, TO-247, TO-247, 1200V - HGTG10N120BND
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Quantity excl. VAT VAT incl.
1 - 1 8.48$ 9.17$
2 - 2 8.06$ 8.71$
3 - 4 7.63$ 8.25$
5 - 9 7.21$ 7.79$
10 - 19 7.04$ 7.61$
20 - 29 6.87$ 7.43$
30 - 47 6.62$ 7.16$
Quantity U.P
1 - 1 8.48$ 9.17$
2 - 2 8.06$ 8.71$
3 - 4 7.63$ 8.25$
5 - 9 7.21$ 7.79$
10 - 19 7.04$ 7.61$
20 - 29 6.87$ 7.43$
30 - 47 6.62$ 7.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 47
Set of 1

N-channel transistor, 17A, TO-247, TO-247, 1200V - HGTG10N120BND. N-channel transistor, 17A, TO-247, TO-247, 1200V. Ic(T=100°C): 17A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 1200V. Channel type: N. Conditioning: plastic tube. Collector current: 35A. Ic(pulse): 80A. Marking on the case: 10N120BND. Pd (Power Dissipation, Max): 298W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 165 ns. Td(on): 23 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 2.7V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no. Quantity in stock updated on 29/04/2025, 11:25.

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