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N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V - HUF75645S3S

N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V - HUF75645S3S
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Quantity excl. VAT VAT incl.
1 - 4 4.94$ 5.34$
5 - 9 4.69$ 5.07$
10 - 24 4.54$ 4.91$
25 - 49 4.44$ 4.80$
50 - 99 4.34$ 4.69$
100 - 249 4.20$ 4.54$
250 - 637 4.05$ 4.38$
Quantity U.P
1 - 4 4.94$ 5.34$
5 - 9 4.69$ 5.07$
10 - 24 4.54$ 4.91$
25 - 49 4.44$ 4.80$
50 - 99 4.34$ 4.69$
100 - 249 4.20$ 4.54$
250 - 637 4.05$ 4.38$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 637
Set of 1

N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V - HUF75645S3S. N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.0115 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AB ). Voltage Vds(max): 100V. C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Function: UltraFET Power MOSFET. G-S Protection: no. Id(imp): 430A. IDss (min): 1uA. Marking on the case: 75645 S. Number of terminals: 2. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Fairchild. Quantity in stock updated on 16/06/2025, 09:25.

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