N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V - HUF75645S3S

Quantity	excl. VAT	VAT incl.
1 - 4	4.94$	5.34$
5 - 9	4.69$	5.07$
10 - 24	4.44$	4.80$
25 - 49	4.20$	4.54$
50 - 99	4.10$	4.43$
100 - 249	4.00$	4.32$
250 - 637	3.85$	4.16$

Quantity	U.P
1 - 4	4.94$	5.34$
5 - 9	4.69$	5.07$
10 - 24	4.44$	4.80$
25 - 49	4.20$	4.54$
50 - 99	4.10$	4.43$
100 - 249	4.00$	4.32$
250 - 637	3.85$	4.16$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 637

Set of 1

N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V - HUF75645S3S. N-channel transistor, 65A, 75A, 250uA, 0.0115 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-252AB ), 100V. ID (T=100°C): 65A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.0115 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-252AB ). Voltage Vds(max): 100V. C(in): 3790pF. Cost): 810pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 145 ns. Type of transistor: MOSFET. Function: UltraFET Power MOSFET. Id(imp): 430A. IDss (min): 1uA. Marking on the case: 75645 S. Pd (Power Dissipation, Max): 310W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 41 ns. Td(on): 14 ns. Technology: UltraFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 11:25.