IGBT transistor BUP313. Collector current Ic [A]: 32A. Collector peak current Ip [A]: 64A. Collector-emitter voltage Uce [V]: 1.2 kV. Component family: IGBT transistor. Configuration: PCB through-hole mounting. Gate breakdown voltage Ugs [V]: 6.5V. Housing (JEDEC standard): -. Housing: TO-218. Manufacturer's marking: BUP313. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 3. RoHS: no. Switch-off delay tf[nsec.]: 530 ns. Switch-on time ton [nsec.]: 100 ns. Original product from manufacturer: Infineon. Quantity in stock updated on 12/11/2025, 21:16