IGBT transistor FGA40N65SMD-DIóDA
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 18.05$ | 19.51$ |
| 2 - 2 | 17.15$ | 18.54$ |
| 3 - 4 | 16.79$ | 18.15$ |
| 5 - 9 | 16.25$ | 17.57$ |
| 10 - 14 | 15.89$ | 17.18$ |
| 15 - 19 | 15.35$ | 16.59$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 18.05$ | 19.51$ |
| 2 - 2 | 17.15$ | 18.54$ |
| 3 - 4 | 16.79$ | 18.15$ |
| 5 - 9 | 16.25$ | 17.57$ |
| 10 - 14 | 15.89$ | 17.18$ |
| 15 - 19 | 15.35$ | 16.59$ |
IGBT transistor FGA40N65SMD-DIóDA. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGA40N65SMD. Collector-emitter voltage Uce [V]: 650V. Collector current Ic [A]: 40A. Maximum collector current (A): 60.4k Ohms. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 120ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 174W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Original product from manufacturer Onsemi. Quantity in stock updated on 15/06/2025, 08:25.
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