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Semiconductors Transistors IGBT transistors

IGBT transistor HGTG20N60A4

IGBT transistor HGTG20N60A4
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Quantity excl. VAT VAT incl.
1 - 1 20.52$ 22.18$
2 - 2 19.49$ 21.07$
3 - 4 19.08$ 20.63$
5 - 9 18.47$ 19.97$
10 - 14 18.06$ 19.52$
15 - 19 17.44$ 18.85$
20 - 131 16.82$ 18.18$
Quantity U.P
1 - 1 20.52$ 22.18$
2 - 2 19.49$ 21.07$
3 - 4 19.08$ 20.63$
5 - 9 18.47$ 19.97$
10 - 14 18.06$ 19.52$
15 - 19 17.44$ 18.85$
20 - 131 16.82$ 18.18$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 131
Set of 1

IGBT transistor HGTG20N60A4. IGBT transistor. RoHS: yes. Housing: TO-247. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Germanium diode: no. Collector current: 70A. Ic(pulse): 280A. Ic(T=100°C): 40A. Note: N-channel MOS IGBT transistor. Marking on the case: 20N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. Spec info: 290W. Assembly/installation: PCB through-hole mounting. Td(off): 73 ns. Td(on): 15 ns. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Quantity in stock updated on 15/06/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 12
HGTG30N60A4

HGTG30N60A4

N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing ...
HGTG30N60A4
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: G30N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V
HGTG30N60A4
N-channel transistor, 60A, TO-247, TO-247 ( AC ), 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. CE diode: no. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Function: SMPS Series IGBT. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: G30N60A4. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.6V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V
Set of 1
16.23$ VAT incl.
(15.01$ excl. VAT)
16.23$

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