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Semiconductors Transistors IGBT transistors

IGBT transistor HGTG20N60A4D

IGBT transistor HGTG20N60A4D
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Quantity excl. VAT VAT incl.
1 - 1 13.80$ 14.92$
2 - 2 13.11$ 14.17$
3 - 4 12.83$ 13.87$
5 - 9 12.42$ 13.43$
10 - 14 12.14$ 13.12$
15 - 19 11.73$ 12.68$
20 - 149 12.64$ 13.66$
Quantity U.P
1 - 1 13.80$ 14.92$
2 - 2 13.11$ 14.17$
3 - 4 12.83$ 13.87$
5 - 9 12.42$ 13.43$
10 - 14 12.14$ 13.12$
15 - 19 11.73$ 12.68$
20 - 149 12.64$ 13.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 149
Set of 1

IGBT transistor HGTG20N60A4D. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60A4D. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Maximum collector current (A): 280A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 73 ns. Gate breakdown voltage Ugs [V]: 7V. Maximum dissipation Ptot [W]: 290W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 35 ns. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Original product from manufacturer Onsemi. Quantity in stock updated on 15/06/2025, 08:25.

Technical documentation

Equivalent products :

Quantity in stock : 66
HGTG30N60A4D

HGTG30N60A4D

N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing ...
HGTG30N60A4D
N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. Spec info: 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V
HGTG30N60A4D
N-channel transistor, TO-247, 60A, TO-247 ( AC ), 600V. Housing: TO-247. Ic(T=100°C): 60A. Housing (according to data sheet): TO-247 ( AC ). Collector/emitter voltage Vceo: 600V. RoHS: yes. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 30 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast Diod. Germanium diode: no. Collector current: 75A. Ic(pulse): 240A. Marking on the case: 30N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 463W. Spec info: 463W. Assembly/installation: PCB through-hole mounting. Td(off): 150 ns. Td(on): 25 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V
Set of 1
17.97$ VAT incl.
(16.62$ excl. VAT)
17.97$

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