| Quantity in stock: 55 |
IGBT transistor HGTG20N60A4D
Quantity
Unit price
1-4
13.51$
5-14
12.37$
15-29
11.68$
30-59
11.11$
60+
10.09$
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| Obsolete product, soon to be removed from the catalog. Last items available | |
| Equivalence available | |
| Quantity in stock: 17 |
IGBT transistor HGTG20N60A4D. Assembly/installation: PCB through-hole mounting. CE diode: yes. Channel type: N. Collector current Ic [A]: 70A. Collector current: 70A. Collector peak current Ip [A]: 280A. Collector-emitter voltage Uce [V]: 600V. Collector/emitter voltage Vceo: 600V. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Conditioning unit: 30. Conditioning: plastic tube. Configuration: PCB through-hole mounting. Function: SMPS Series IGBT with Anti-Parallel Hyperfast. Gate breakdown voltage Ugs [V]: 7V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (JEDEC standard): -. Housing (according to data sheet): TO-247AC. Housing: TO-247. Ic(T=100°C): 40A. Ic(pulse): 280A. Manufacturer's marking: 20N60A4D. Marking on the case: 20N60A4D. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 290W. Maximum saturation voltage VCE(sat): 2.7V. Number of terminals: 3. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 290W. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Switch-off delay tf[nsec.]: 73 ns. Switch-on time ton [nsec.]: 15 ns. Td(off): 73 ns. Td(on): 15 ns. Trr Diode (Min.): 35 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 13/11/2025, 20:19
HGTG20N60A4D
39 parameters
Assembly/installation
PCB through-hole mounting
CE diode
yes
Channel type
N
Collector current Ic [A]
70A
Collector current
70A
Collector peak current Ip [A]
280A
Collector-emitter voltage Uce [V]
600V
Collector/emitter voltage Vceo
600V
Component family
IGBT transistor with built-in high-speed free-wheeling diode
Conditioning unit
30
Conditioning
plastic tube
Configuration
PCB through-hole mounting
Function
SMPS Series IGBT with Anti-Parallel Hyperfast
Gate breakdown voltage Ugs [V]
7V
Gate/emitter voltage VGE(th) min.
4.5V
Gate/emitter voltage VGE(th)max.
7V
Gate/emitter voltage VGE
20V
Germanium diode
no
Housing (according to data sheet)
TO-247AC
Housing
TO-247
Ic(T=100°C)
40A
Ic(pulse)
280A
Manufacturer's marking
20N60A4D
Marking on the case
20N60A4D
Max temperature
+150°C.
Maximum dissipation Ptot [W]
290W
Maximum saturation voltage VCE(sat)
2.7V
Number of terminals
3
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
290W
RoHS
yes
Saturation voltage VCE(sat)
1.8V
Switch-off delay tf[nsec.]
73 ns
Switch-on time ton [nsec.]
15 ns
Td(off)
73 ns
Td(on)
15 ns
Trr Diode (Min.)
35 ns
Original product from manufacturer
Fairchild