IGBT transistor HGTG20N60B3

Quantity	excl. VAT	VAT incl.
1 - 1	9.15$	9.89$
2 - 2	8.69$	9.39$
3 - 4	8.24$	8.91$
5 - 9	7.78$	8.41$
10 - 19	7.60$	8.22$
20 - 29	7.41$	8.01$
30 - 182	7.14$	7.72$

Quantity	U.P
1 - 1	9.15$	9.89$
2 - 2	8.69$	9.39$
3 - 4	8.24$	8.91$
5 - 9	7.78$	8.41$
10 - 19	7.60$	8.22$
20 - 29	7.41$	8.01$
30 - 182	7.14$	7.72$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 182

Set of 1

IGBT transistor HGTG20N60B3. IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): UFS Series IGBT. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: HG20N60B3. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 40A. Switch-on time ton [nsec.]: 25 ns. Switch-off delay tf[nsec.]: 220 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 165W. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Maximum collector current (A): 160A. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 28/04/2025, 11:25.

Technical documentation