IGBT transistor IGW60T120

Quantity	excl. VAT	VAT incl.
1 - 1	18.42$	19.91$
2 - 2	17.50$	18.92$
3 - 4	17.13$	18.52$
5 - 9	16.58$	17.92$
10 - 14	16.21$	17.52$
15 - 19	15.66$	16.93$
20 - 67	15.11$	16.33$

Quantity	U.P
1 - 1	18.42$	19.91$
2 - 2	17.50$	18.92$
3 - 4	17.13$	18.52$
5 - 9	16.58$	17.92$
10 - 14	16.21$	17.52$
15 - 19	15.66$	16.93$
20 - 67	15.11$	16.33$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 67

Set of 1

IGBT transistor IGW60T120. IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: G60T120. Collector-emitter voltage Uce [V]: 1.2 kV. Collector current Ic [A]: 60A. Maximum collector current (A): 150A. Switch-on time ton [nsec.]: 50 ns. Switch-off delay tf[nsec.]: 480 ns. Gate breakdown voltage Ugs [V]: 6.5V. Maximum dissipation Ptot [W]: 375W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): no. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.4V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 6.5V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 15/06/2025, 07:25.

Technical documentation

IGBT transistor IGW60T120

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