IGBT transistor IGW75N65H5XKSA1
Quantity
Unit price
1-4
11.95$
5-9
10.13$
10-19
9.78$
20-49
9.53$
50+
9.23$
| Quantity in stock: 5 |
IGBT transistor IGW75N65H5XKSA1. Charge: 160nC. Collector current Ic [A]: 75A. Collector peak current Ip [A]: 300A. Emitter - Gate Voltage: ±20V. Housing: TO247. RoHS: yes. Technology: TRENCHSTOP™. Type of transistor: IGBT. Voltage (collector - emitter): 650V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 31/12/2025, 18:10
IGW75N65H5XKSA1
10 parameters
Charge
160nC
Collector current Ic [A]
75A
Collector peak current Ip [A]
300A
Emitter - Gate Voltage
±20V
Housing
TO247
RoHS
yes
Technology
TRENCHSTOP™
Type of transistor
IGBT
Voltage (collector - emitter)
650V
Original product from manufacturer
Infineon Technologies