IGBT transistor IHW30N120R5XKSA1

IGBT transistor IHW30N120R5XKSA1. IGBT transistor. C(in): 1800pF. Cost): 55pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Collector current: 60A. Ic(pulse): 90A. Ic(T=100°C): 30A. Marking on the case: H30MR5. Number of terminals: 3. Pd (Power Dissipation, Max): 330W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 330 ns. Housing: TO-247. Housing (according to data sheet): PG-TO247-3. Operating temperature: -40...+175°C. Saturation voltage VCE(sat): 1.55V. Maximum saturation voltage VCE(sat): 1.85V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5.1V. Gate/emitter voltage VGE(th)max.: 6.4V. Function: Inductive Cooking, Microwave Ovens. Spec info: Reverse conducting IGBT with monolithic body diode. CE diode: yes. Germanium diode: no. Quantity in stock updated on 28/04/2025, 11:25.