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IGBT transistor IRG4BC20KDPBF

IGBT transistor IRG4BC20KDPBF
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Quantity excl. VAT VAT incl.
1 - 1 6.39$ 6.91$
2 - 2 6.07$ 6.56$
3 - 4 5.75$ 6.22$
5 - 9 5.43$ 5.87$
10 - 19 6.70$ 7.24$
20 - 29 7.22$ 7.80$
30 - 47 7.17$ 7.75$
Quantity U.P
1 - 1 6.39$ 6.91$
2 - 2 6.07$ 6.56$
3 - 4 5.75$ 6.22$
5 - 9 5.43$ 5.87$
10 - 19 6.70$ 7.24$
20 - 29 7.22$ 7.80$
30 - 47 7.17$ 7.75$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 47
Set of 1

IGBT transistor IRG4BC20KDPBF. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 16A. Switch-on time ton [nsec.]: 54 ns. Switch-off delay tf[nsec.]: 180 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Td(off): 180 ns. Td(on): 54 ns. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.27V. Maximum saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Maximum collector current (A): 32A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 28/04/2025, 11:25.

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