Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.39$ | 6.91$ |
2 - 2 | 6.07$ | 6.56$ |
3 - 4 | 5.75$ | 6.22$ |
5 - 9 | 5.43$ | 5.87$ |
10 - 19 | 6.70$ | 7.24$ |
20 - 29 | 7.22$ | 7.80$ |
30 - 47 | 7.17$ | 7.75$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.39$ | 6.91$ |
2 - 2 | 6.07$ | 6.56$ |
3 - 4 | 5.75$ | 6.22$ |
5 - 9 | 5.43$ | 5.87$ |
10 - 19 | 6.70$ | 7.24$ |
20 - 29 | 7.22$ | 7.80$ |
30 - 47 | 7.17$ | 7.75$ |
IGBT transistor IRG4BC20KDPBF. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4BC20KD. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 16A. Switch-on time ton [nsec.]: 54 ns. Switch-off delay tf[nsec.]: 180 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 60W. Td(off): 180 ns. Td(on): 54 ns. Housing: TO-220. Housing (according to data sheet): TO-220 ( AB ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.27V. Maximum saturation voltage VCE(sat): 2.8V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Maximum collector current (A): 32A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 28/04/2025, 11:25.
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