Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.17$ | 10.99$ |
2 - 2 | 9.67$ | 10.45$ |
3 - 4 | 9.16$ | 9.90$ |
5 - 9 | 11.61$ | 12.55$ |
10 - 19 | 13.50$ | 14.59$ |
20 - 29 | 14.23$ | 15.38$ |
30 - 183 | 14.04$ | 15.18$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.17$ | 10.99$ |
2 - 2 | 9.67$ | 10.45$ |
3 - 4 | 9.16$ | 9.90$ |
5 - 9 | 11.61$ | 12.55$ |
10 - 19 | 13.50$ | 14.59$ |
20 - 29 | 14.23$ | 15.38$ |
30 - 183 | 14.04$ | 15.18$ |
IGBT transistor IRG4PF50WPBF. IGBT transistor. RoHS: yes. Component family: IGBT transistor. Housing: PCB soldering. Housing: TO-247AC. Housing (JEDEC standard): TO-247AC. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: IRG4PF50W. Collector-emitter voltage Uce [V]: 900V. Collector current Ic [A]: 51A. Switch-on time ton [nsec.]: 29 ns. Switch-off delay tf[nsec.]: 110 ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 200W. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 29 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ). Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.25V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 900V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Maximum collector current (A): 204A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 28/04/2025, 14:25.
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