IGBT transistor STGW60V60DF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 16.51$ | 17.85$ |
| 2 - 2 | 15.68$ | 16.95$ |
| 3 - 4 | 15.35$ | 16.59$ |
| 5 - 9 | 14.86$ | 16.06$ |
| 10 - 14 | 14.53$ | 15.71$ |
| 15 - 19 | 14.03$ | 15.17$ |
| 20 - 33 | 13.54$ | 14.64$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 16.51$ | 17.85$ |
| 2 - 2 | 15.68$ | 16.95$ |
| 3 - 4 | 15.35$ | 16.59$ |
| 5 - 9 | 14.86$ | 16.06$ |
| 10 - 14 | 14.53$ | 15.71$ |
| 15 - 19 | 14.03$ | 15.17$ |
| 20 - 33 | 13.54$ | 14.64$ |
IGBT transistor STGW60V60DF. IGBT transistor. C(in): 8000pF. Cost): 280pF. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 74 ns. Germanium diode: no. Collector current: 80A. Ic(pulse): 240A. Ic(T=100°C): 60A. Marking on the case: GW60V60DF. Number of terminals: 3. Pd (Power Dissipation, Max): 375W. RoHS: yes. Spec info: Trench gate field-stop IGBT, V series. Assembly/installation: PCB through-hole mounting. Td(off): 216 ns. Td(on): 57 ns. Housing: TO-247. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.85V. Maximum saturation voltage VCE(sat): 2.3V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 5V. Gate/emitter voltage VGE(th)max.: 7V. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 15/06/2025, 17:25.
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