Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.55$ | 3.84$ |
5 - 9 | 3.37$ | 3.64$ |
10 - 24 | 3.19$ | 3.45$ |
25 - 49 | 3.02$ | 3.26$ |
50 - 99 | 2.95$ | 3.19$ |
100 - 109 | 2.70$ | 2.92$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.55$ | 3.84$ |
5 - 9 | 3.37$ | 3.64$ |
10 - 24 | 3.19$ | 3.45$ |
25 - 49 | 3.02$ | 3.26$ |
50 - 99 | 2.95$ | 3.19$ |
100 - 109 | 2.70$ | 2.92$ |
N-channel transistor, 115A, 162A, 250uA, 3.5m Ohms, TO-220, TO-220AB, 40V - IRF1404. N-channel transistor, 115A, 162A, 250uA, 3.5m Ohms, TO-220, TO-220AB, 40V. ID (T=100°C): 115A. ID (T=25°C): 162A. Idss (max): 250uA. On-resistance Rds On: 3.5m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 40V. C(in): 7360pF. Cost): 1680pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 71 ns. Type of transistor: MOSFET. Function: AUTOMOTIVE MOSFET. Id(imp): 650A. IDss (min): 20uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 09:25.
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