N-channel transistor, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V - IRF3205

Quantity	excl. VAT	VAT incl.
1 - 4	3.03$	3.28$
5 - 9	2.88$	3.11$
10 - 24	2.73$	2.95$
25 - 49	2.58$	2.79$
50 - 99	2.35$	2.54$
100 - 249	2.29$	2.48$
250 - 496	2.18$	2.36$

Quantity	U.P
1 - 4	3.03$	3.28$
5 - 9	2.88$	3.11$
10 - 24	2.73$	2.95$
25 - 49	2.58$	2.79$
50 - 99	2.35$	2.54$
100 - 249	2.29$	2.48$
250 - 496	2.18$	2.36$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 496

Set of 1

N-channel transistor, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V - IRF3205. N-channel transistor, 80A, 110A, 250uA, 0.008 Ohms, TO-220, TO-220AB, 55V. ID (T=100°C): 80A. ID (T=25°C): 110A. Idss (max): 250uA. On-resistance Rds On: 0.008 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: 'Advanced Process Technology'. Id(imp): 390A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 14:25.

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