N-channel transistor, 28A, 57A, 250uA, 23m Ohms, TO-220, TO-220AB, 100V - IRF3710

Quantity	excl. VAT	VAT incl.
1 - 4	3.02$	3.26$
5 - 9	2.87$	3.10$
10 - 24	2.72$	2.94$
25 - 49	2.57$	2.78$
50 - 99	2.51$	2.71$
100 - 161	2.28$	2.46$

Quantity	U.P
1 - 4	3.02$	3.26$
5 - 9	2.87$	3.10$
10 - 24	2.72$	2.94$
25 - 49	2.57$	2.78$
50 - 99	2.51$	2.71$
100 - 161	2.28$	2.46$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 161

Set of 1

N-channel transistor, 28A, 57A, 250uA, 23m Ohms, TO-220, TO-220AB, 100V - IRF3710. N-channel transistor, 28A, 57A, 250uA, 23m Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 28A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 23m Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 3230pF. Cost): 420pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 49 ns. Td(on): 12 ns. Technology: HEXFET® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 27/04/2025, 13:25.

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