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N-channel transistor, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V - IRF3710S

N-channel transistor, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V - IRF3710S
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Quantity excl. VAT VAT incl.
1 - 4 4.73$ 5.11$
5 - 9 4.49$ 4.85$
10 - 24 4.26$ 4.61$
25 - 49 4.02$ 4.35$
50 - 58 3.93$ 4.25$
Quantity U.P
1 - 4 4.73$ 5.11$
5 - 9 4.49$ 4.85$
10 - 24 4.26$ 4.61$
25 - 49 4.02$ 4.35$
50 - 58 3.93$ 4.25$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 58
Set of 1

N-channel transistor, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V - IRF3710S. N-channel transistor, 40A, 57A, 250uA, 0.025 Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 40A. ID (T=25°C): 57A. Idss (max): 250uA. On-resistance Rds On: 0.025 Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 3000pF. Cost): 640pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 210 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 180A. IDss (min): 25uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 58 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 27/04/2025, 13:25.

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