Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.03$ | 2.19$ |
5 - 9 | 1.93$ | 2.09$ |
10 - 24 | 1.83$ | 1.98$ |
25 - 49 | 1.73$ | 1.87$ |
50 - 99 | 1.68$ | 1.82$ |
100 - 249 | 1.55$ | 1.68$ |
250 - 301 | 1.47$ | 1.59$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.03$ | 2.19$ |
5 - 9 | 1.93$ | 2.09$ |
10 - 24 | 1.83$ | 1.98$ |
25 - 49 | 1.73$ | 1.87$ |
50 - 99 | 1.68$ | 1.82$ |
100 - 249 | 1.55$ | 1.68$ |
250 - 301 | 1.47$ | 1.59$ |
N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V - IRF540N. N-channel transistor, 23A, 33A, 250uA, 0.044 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 23A. ID (T=25°C): 33A. Idss (max): 250uA. On-resistance Rds On: 0.044 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 1960pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 115 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 110A. IDss (min): 25uA. Pd (Power Dissipation, Max): 130W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 39 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 13:25.
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