N-channel transistor, 0.35 Ohms, TO-220, TO-220, 200V, 5.7A, 9A, 50uA - IRF630

N-channel transistor, 0.35 Ohms, TO-220, TO-220, 200V, 5.7A, 9A, 50uA - IRF630. N-channel transistor, 0.35 Ohms, TO-220, TO-220, 200V, 5.7A, 9A, 50uA. On-resistance Rds On: 0.35 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 50uA. RoHS: yes. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Td(off): 12 ns. Td(on): 10 ns. Technology: MESH OVERLAY MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. C(in): 540pF. Cost): 90pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High Current Switching. G-S Protection: no. Id(imp): 36A. IDss (min): 1uA. Number of terminals: 3. Temperature: +150°C. Original product from manufacturer Stmicroelectronics. Quantity in stock updated on 26/07/2025, 12:25.