N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V - IRF730

Quantity	excl. VAT	VAT incl.
1 - 4	1.73$	1.87$
5 - 9	1.65$	1.78$
10 - 24	1.56$	1.69$
25 - 49	1.47$	1.59$
50 - 99	1.44$	1.56$
100 - 138	1.30$	1.41$

Quantity	U.P
1 - 4	1.73$	1.87$
5 - 9	1.65$	1.78$
10 - 24	1.56$	1.69$
25 - 49	1.47$	1.59$
50 - 99	1.44$	1.56$
100 - 138	1.30$	1.41$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 138

Set of 1

N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V - IRF730. N-channel transistor, 3.3A, 5.5A, 250uA, 1 Ohm, TO-220, TO-220AB, 400V. ID (T=100°C): 3.3A. ID (T=25°C): 5.5A. Idss (max): 250uA. On-resistance Rds On: 1 Ohm. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 700pF. Cost): 170pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 22A. IDss (min): 25uA. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 38 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 27/04/2025, 05:25.

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