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Semiconductors Transistors N-P MOSFET transistor pair

MOSFET transistor IRF7319

MOSFET transistor IRF7319
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.56$ 1.69$
5 - 9 1.48$ 1.60$
10 - 24 1.40$ 1.51$
25 - 44 1.32$ 1.43$
Quantity U.P
1 - 4 1.56$ 1.69$
5 - 9 1.48$ 1.60$
10 - 24 1.40$ 1.51$
25 - 44 1.32$ 1.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 44
Set of 1

MOSFET transistor IRF7319. MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Note: ( = P23AF 4532 SMD ). Note: Rds-on 0.029 Ohms / 0.058 Ohms. Quantity in stock updated on 26/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 810
FDS8958A

FDS8958A

MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS:...
FDS8958A
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.052 Ohms (Q2)
FDS8958A
MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.052 Ohms (Q2)
Set of 1
1.52$ VAT incl.
(1.41$ excl. VAT)
1.52$

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