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N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V - IRF740

N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V - IRF740
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Quantity excl. VAT VAT incl.
1 - 4 2.37$ 2.56$
5 - 9 2.25$ 2.43$
10 - 24 2.13$ 2.30$
25 - 49 2.01$ 2.17$
50 - 99 1.97$ 2.13$
100 - 135 1.81$ 1.96$
Quantity U.P
1 - 4 2.37$ 2.56$
5 - 9 2.25$ 2.43$
10 - 24 2.13$ 2.30$
25 - 49 2.01$ 2.17$
50 - 99 1.97$ 2.13$
100 - 135 1.81$ 1.96$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 135
Set of 1

N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V - IRF740. N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 09:25.

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