Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.37$ | 2.56$ |
5 - 9 | 2.25$ | 2.43$ |
10 - 24 | 2.13$ | 2.30$ |
25 - 49 | 2.01$ | 2.17$ |
50 - 99 | 1.97$ | 2.13$ |
100 - 135 | 1.81$ | 1.96$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.37$ | 2.56$ |
5 - 9 | 2.25$ | 2.43$ |
10 - 24 | 2.13$ | 2.30$ |
25 - 49 | 2.01$ | 2.17$ |
50 - 99 | 1.97$ | 2.13$ |
100 - 135 | 1.81$ | 1.96$ |
N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V - IRF740. N-channel transistor, 6.3A, 10A, 250uA, 0.55 Ohms, TO-220, TO-220AB, 400V. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 250uA. On-resistance Rds On: 0.55 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 400V. C(in): 1400pF. Cost): 330pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Fast Switching Power MOSFET transistor. Id(imp): 40A. IDss (min): 25uA. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 14 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/emitter voltage VGE(th) min.: 2V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 4 v. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 27/04/2025, 09:25.
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